Publikationen

Constitution of the systems {V,Nb,Ta}-Sb and physical properties of di-antimonides {V,Nb,Ta}Sb-2

Autor(en)
Fainan Failamani, Pavel Broz, Daniele Maccio, Stephan Puchegger, Helmut Müller, Leonid P. Salamakha, Herwig Michor, Andrij Grytsiv, Adriana Saccone, Ernst Bauer, Gerald Giester, Peter Franz Rogl
Abstrakt

The binary phase diagrams {V,Nb,Ta}-Sb below 1450 °C were studied by means of XRPD, EPMA, and DTA measurements. In the V-Sb system, five stable binary phases were observed in this investigation: V

3+xSb

1-x, →T-V

3Sb

2, hT-V

2-xSb, V

7.46Sb

9, V

1-xSb

2. The V-Sb phase diagram is characterized by two degenerate eutectic reactions: L→V

3+xSb

1-x+(V) (T > 1450 °C at 18.1 at.% Sb) and LV

1-xSb

2+(Sb) (T=(621 ± 5)°C at ∼99 at.% Sb), three peritectic reactions: L + V

3+xSb

1-x+hT-V

2-xSb (T=(1230 ± 10)°C at ∼42 at.% Sb), L + hT-V

2-xSb+V

7.46Sb

9 (T=(920 ± 10)°C at ∼87 at.% Sb), and L + V

7.46Sb

9+V

1-xSb

2 (T=(869 ± 5)°C at ∼88 at.% Sb), a peritectoid reaction: V

3+xSb

1-x + hT-V

2-xSb→T-V

3Sb

2 at (875 ± 25)°C, a eutectoid reaction: hT-V

2-xSb →T-V

3Sb

2+V

7.46Sb

9 at (815 ± 15)°C and congruent melting of V

3+xSb

1-x (T > 1450 °C). An X-ray single crystal study of V

5Sb

4C

1-x proved the existence of interstitial elements in the octahedral voids of a partially filled Ti

5Te

4-type structure (x∼0.5; R

F2 = 0.0101), therefore this phase (earlier labeled "V

5Sb

4") was excluded from the binary equilibrium phase diagram. V

5Sb

4C

1-x is the first representative of a filled Ti

5Te

4-type structure. A re-investigation of the Nb-Sb system removed the contradiction between the hitherto reported phase diagrams and confirmed the version derived by Melnyk et al. (see ref. [1]). Three binary phases exist in the Ta-Sb system: Ta

3+xSb

1-x, Ta

5Sb

4, TaSb

2. Due to instrumental limits (<1450 °C), only the peritectic reaction of TaSb L + Tab+ TaSb ((1080 ± 10)°C at ∼92 at.% Sb) and a degenerate Sb-rich eutectic reaction (L+TaSb (622 ± 5)° ∼99 at.% Sb) have been determined. Physical properties (mechanical and transport properties) of binary di-antimonides were investigated with respect to a potential use of these metals either as diffusion barriers or electrodes for thermoelectric devices based on skutterudites. All group-V metal di-antimonides have low metallic-type resistivity and relatively high thermal conductivity. Magnetic field has little influence on the resistivity of V at low temperature, while on {Nb,Ta}Sb it increases the resistivity, especially on NbSb The coefficient of thermal expansion (CTE) decreases from V to TaSb, particularly the CTE value of NbSb is in the range of average n-type filled skutterudites. In contrast to the CTE value, elastic moduli increase from V to TaSb. The value for V is in the range of Sb-based skutterudites, whereas the values for {Nb,Ta}Sb are significantly higher.

Organisation(en)
Institut für Physikalische Chemie, Fakultätszentrum für Nanostrukturforschung, Institut für Mineralogie und Kristallographie, Institut für Materialchemie
Externe Organisation(en)
Christian Doppler Forschungsgesellschaft (CDG), Masaryk University, Università degli Studi di Genova, Technische Universität Wien
Journal
Intermetallics
Band
65
Seiten
94-110
Anzahl der Seiten
17
ISSN
0966-9795
DOI
https://doi.org/10.1016/j.intermet.2015.05.006
Publikationsdatum
10-2015
Peer-reviewed
Ja
ÖFOS 2012
104003 Anorganische Chemie, 104017 Physikalische Chemie, 104011 Materialchemie, 105113 Kristallographie
Schlagwörter
ASJC Scopus Sachgebiete
Mechanics of Materials, Mechanical Engineering, Metals and Alloys, Materials Chemistry, Allgemeine Chemie
Link zum Portal
https://ucrisportal.univie.ac.at/de/publications/5a989f8b-7d8d-436a-b142-4e9cb235686e